Impact Factor:3.1

DOI number:10.1109/TED.2022.3225135

Journal:IEEE Transactions on Electron Devices

Key Words:Self-powered deep-ultraviolet (DUV) photodetector;spontaneous oxidation;ultrawide bandgap semiconductors

Abstract:In this work, we demonstrate the fabrication of CuxO/Ga2O3 heterojunction through the spontaneous oxidation of Cu film into CuxO layer during electron beam evaporation. The heterojunction device presents a ultraviolet (UV)/visible rejection ratio (R-265/R-430) at zero bias of 435, enabling the self-powered deep-UV (DUV) photodetection. Upon 265-nm illumination (light intensity: 21.7 mu W.cm(-2)), the responsivity (R) and specific detectivity (D*) reach 0.97 mA.W-1 and 6.28 x 10(10) Jones, respectively. A fast response speed of 5.34/3.64 ms (tau(r)/tau(f)) has also been observed, which may ascribe to the fully depleted thin CuxO layer and suggest the ability to detect rapidly switched optical signal. This work sheds light on the facile fabrication of beta-Ga2O3 -based self-powered DUV photodetectors.

Co-author:Xi-Shen Guo, Yi-Hang Dai, Zhen Yang, Chun-Yan Wu, Li Wang, Xiang Zhang, Xiu-Juan Wang, Lin-Bao Luo

First Author:Chen-Yue Zhu

Correspondence Author:Chun-Yan Wu, Xiu-Juan Wang,Lin-Bao Luo

Document Type:Article

Volume:70

Issue:1

Page Number:167-171

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2023-01-01