Impact Factor:3.1

DOI number:10.1109/TED.2022.3171501

Journal:IEEE Transactions on Electron Devices

Key Words:Multispectral;narrowband detection;Schottky junction;Si photodetector;wavelength tunable

Abstract:The development of high-performance multispectral photodetector with narrowband and tunable spectral sensitivity is of importance but remains highly challenging to date. Here, we have reported on the fabrication of a Si Au/n-type Si/Au photodetector with tunable narrowband sensitivity not only in ultraviolet but also in near-infrared region, which is related to the controlled charge collection narrowing (CCN) mechanism. What is more, the negative response peak of the device can be readily tuned from 365 to 605 nm, and the positive response peak can be modulated from 938 to 970 nm when the bias varies from 0.1 to -0.1 V. In particular, the full-width at half-maximum is as small as 92 and 117 nm when the negative and positive response peaks approach the ultraviolet short wavelength end and near-infrared long wavelength end, respectively. The opposite polarity of the device responses in ultraviolet-visible and near-infrared regions renders the present Si photodetector potentially important in future multiple band optoelectronic systems.

Co-author:Bo-Han Chen, Chang-Yue Fang, Jun He, Chunyan Wu, Xiang Zhang, Xiao-Ping Yang,Jian-Bo Mao, Jigang Hu, Lin-Bao Luo

First Author:Li Wang

Correspondence Author:Li Wang,Lin-Bao Luo

Document Type:Article

Volume:69

Issue:6

Page Number:3258-3261

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2022-06-01