Impact Factor:6.8

DOI number:10.1002/admt.202200863

Journal:Advanced Materials Technologies

Key Words:broadband photodetection;heterojunction photodetector; periodic inverse silicon micropyramid;RGB-IR image sensing

Abstract:Here, the fabrication of an addressable 8 x 8 photodetector array is reported by combining In2Se3 nanofilm with periodic inverse micropyramid-Si (PIMP-Si), which is obtained through colloidal lithography and anisotropic wet etching. Due to the unique configuration and the outstanding light trapping effect, the as-fabricated heterojunction device presents an excellent self-powered photoresponse over the broadband wavelength range from 265 to 1300 nm, with a peak sensitivity at approximate to 810 nm. The responsivity, specific detectivity, and rise/fall time are estimated to be 0.58 A W-1, 1.76 x 10(12) Jones, and 5.1/18 mu s, respectively, which are competitive in comparison with other devices with similar geometries. Meanwhile, the photodetector array displays a satisfactory pixel-to-pixel uniformity, which allows the device to record the full-color image of "HFUT" with satisfying resolution, revealing the potential application of the PIMP-Si/In2Se3 heterojunction photodetector array for real-time red-green-blue-infrared image sensing and video capturing.

Co-author:Chen-Yue Zhu, Zhen Yang, Di-Hua Lin, Chun-Yan Wu, Shi-Rong Chen,Yi-Zhong Yang, Li Wang, Yu-Xue Zhou, Lin-Bao Luo

First Author:Chao Zhang

Correspondence Author:Chun-Yan Wu, Yi-Zhong Yang,Lin-Bao Luo

Document Type:Article

Volume:8

Issue:3

ISSN No.:2365-709X

Translation or Not:no

Date of Publication:2023-02-01