Impact Factor:6.4

DOI number:10.1039/d0tc05701k

Journal:Journal of Materials Chemistry C

Abstract:Two-dimensional layered (2D) materials are currently attracting intensive research interest for high-performance photodetection and other optoelectronic applications. However, the study of device integration for multifunctional optoelectronic applications is still at a nascent stage. Here, the assembly of a multilayered PtSe2/pyramid-Si heterostructure-based photodetector array consisting of 8 x 8 device units is demonstrated. Owing to the pronounced light confinement effect of the heterostructures, the devices present an prominent photovoltaic effect, which enables efficient self-driven photodetection in a broadband wavelength spectrum. The I-light/I-dark ratio, responsivity, external quantum efficiency (EQE) and specific detectivity can attain values as high as 5.51 x 10(6), 567 mA W-1, 87% and 1.26 x 10(13) jones, respectively, upon 810 nm near-infrared (NIR) light illumination. What is more, benefiting from the large-scale homogeneous material growth technique, the photodetector array exhibits excellent uniformity and repeatability in photoresponse performance with negligible unit-to-unit variation. The above characteristics provide the photodetector array with the capability of recording a simple image produced by NIR illumination and monitoring a moving photonic signal, showing the great possibility for NIR image sensing and light trajectory tracking applications.

Co-author:Meng-Ru Ma, Hua-Han Chen, Kun-Nan Zhou, Chao Xie, Yi Liang, Li Wang, Chun-Yan Wu, Wen-Hua Yang, Jia-Wen Guo, Lin-Bao Luo

First Author:Meng-Ru Ma

Correspondence Author:Chao Xie, Lin-Bao Luo

Document Type:Article

Volume:9

Issue:8

Page Number:2823-2832

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2021-02-28