Impact Factor:3.0

DOI number:10.1016/j.matlet.2021.129710

Journal:Materials Letters

Key Words:Graphene composite slurry;Low-temperature bonding;Sintering;Surfaces;Plasma treatment

Abstract:Recently, silicon carbide (SiC) has replaced silicon (Si) as a potential material for next-generation power devices. In this study, a Si-SiC low-temperature bonding method based on graphene composite slurry as an interlayer was developed. Ar plasma was used to treat the surfaces of Si and SiC to improve surface hydrophilicity for higher strength bonding. With the increase of discharge power, the root-mean -square (RMS) surface roughness of Si and SiC has obviously increased and the bonding quality was also greatly improved. For 70 W discharge power, the RMS surface roughness values of Si and SiC were 3.22 nm and 1.67 nm respectively, and the bonding strength reached approximately 10 MPa. Through SEM interface analysis, it can be found that a seamless bonding interface was obtained using this bonding process. (c) 2021 Elsevier B.V. All rights reserved.

Co-author:Jian-Kun Wan, Xiang Yin, Wen-Hua Yang, Chao Xie, Chun-Yan Wu, Li Wang, Lin-Bao Luo

First Author:Xi-Ming Ye

Correspondence Author:Wen-Hua Yang, Lin-Bao Luo

Document Type:Article

Volume:293

ISSN No.:0167-577X

Translation or Not:no

Date of Publication:2021-06-15