Impact Factor:5.7

DOI number:10.1021/acs.jpclett.2c00518

Journal:The Journal of Physical Chemistry Letters

Key Words:HIGH-PERFORMANCE;LAYERED INSE;TRANSISTORS;NANOSHEETS

Abstract:In this work, we report on the synthesis of InSe nanobelts through a catalyst-free chemical vapor deposition (CVD) growth approach. A remarkable blue shift of the peakphotoresponse was observed when the thickness of the InSe nanobelt decreases from 562 to165 nm. Silvaco Technology Computer Aided Design (TCAD) simulation reveals that such ashift in spectral response should be ascribed to the wavelength-dependent absorptioncoefficient of InSe, for which incident light with shorter wavelengths will be absorbed near thesurface, while light with longer wavelengths will have a greater penetration depth, leading to ared shift of the absorption edge for thicker nanobelt devices. Considering the above theory,three kinds of photodetectors sensitive to blue (450 nm), green (530 nm), and red (660 nm)incident light were achieved by tailoring the thickness of the nanobelts, which can enable thespectral reconstruction of a purple"H"pattern, suggesting the potential application of 2Dlayered semiconductors in full-color imaging

Co-author:Kai-Jun Cao, Yu-Xuan Le, Jing-Yue Li, Chen-Yue Zhu, Li Wang, Yu-Xue Zhou, Di Wu, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Chun-Yan Wu, Lin-Bao Luo

Document Type:Article

Volume:13

Issue:12

Page Number:2668-2673

ISSN No.:1948-7185

Translation or Not:no

Date of Publication:2022-03-31