Impact Factor:6.4

DOI number:10.1039/c5tc03829d

Journal:Journal of Materials Chemistry C

Abstract:Tetragonal KCu7S4 nanobelts (NBs) with width of 200-600 nm and length of up to hundreds of micrometers were facially synthesized via a solution-based method. Electrical analysis reveals that the as-fabricated NB exhibits typical p-type semiconducting characteristics with an exceptionally high carrier mobility of similar to 870 cm(2) V-1 s(-1), which may be attributed to the quasi-1D conduction path along the c axis in the structure of KCu7S4. A further study of a device based on the Cu/KCu7S4 NB/Au Schottky junction shows a stable memory behavior with a set voltage of about 0.6 V, a current ON/OFF ratio of about 10(4), and a retention time > 10(4) s. Such resistive switching characteristics, according to our analysis are due to the interfacial oxide layers that can efficiently trap the electrons by the oxygen vacancies. This study will offer opportunities for the development of high-performance memory devices with new geometries.

Co-author:Xin-Gang Wang, Zhi-Qiang Pan, You-Yi Wang, Yong-Qiang Yu, Li Wang, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Chun-Yan Wu

Document Type:Article

Volume:4

Issue:3

Page Number:589-595

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2016-01-01