Design and Construction of Ultra-thin MoSe2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection
Release time:2016-10-05
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Impact Factor:9.9
DOI number:10.1007/s12274-016-1151-5
Journal:Nano Research
Key Words:molybdenum diselenide;layer transition metal dichalcogenide (TMD);urtrathin nanosheet;heterojunction;ultrafast photoresponse
Abstract:Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible-near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of similar to 1.2 x 10(12) Jones, and noise current approaching 0.1 pA center dot Hz(-1/2) at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors.
Co-author:Yong-Qiang Yu, Xiao-Li Zhou, Chun-De Wang, Ke-Wei Xu, Yan Zhang, Chun-Yan Wu, Li Wang, Yang Jiang,Qing Yang
First Author:XiangShun Geng
Correspondence Author:Yong-Qiang Yu,Qing Yang, Yang Jiang
Document Type:Article
Volume:9
Issue:9
Page Number:2641-2651
ISSN No.:1998-0124
Translation or Not:no
Date of Publication:2016-09-01