Impact Factor:6.4

DOI number:10.1039/c6tc03856e

Journal:Journal of Materials Chemistry C

Abstract:A highly sensitive near infrared light (NIR) photodetector was fabricated by coating a thin layer of Cu film onto a vertical n-type SiNW array through a solution based reduction reaction. The as-fabricated coreshell SiNW array/Cu Schottky junction exhibits an obvious rectifying behavior in the dark with a turn-on voltage of similar to 0.5 V and a rectification ratio of about 10(2) at +/- 1.5 V. In addition, it shows a pronounced photovoltaic performance when illuminated by NIR light with a wavelength of 980 nm. Such photovoltaic characteristics can allow the device to detect NIR illumination without exterior power supply. Further device analysis reveals that the self-powered NIR photodetector is capable of monitoring ultrafast optical signals with a frequency as high as 30 kHz. What is more, the present device also has obvious advantages of high responsivity, detectivity, on/off ratio, and response speed. Further theoretical simulation reveals that the good device performance is associated with excellent optical and electrical properties of core-shell heterojunction geometry.

Co-author:Zhi-Qiang Pan, You-Yi Wang, Cai-Wang Ge, Yong-Qiang Yu, Ji-Yu Xu, Li Wang, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Lin-Bao Luo

Document Type:Article

Volume:4

Issue:46

Page Number:10804-10811

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2016-01-01