Impact Factor:2.5

DOI number:10.1007/s11051-016-3736-z

Journal:Journal of Nanoparticle Research

Key Words:Semiconductor nanostructures;Heterojunction;Self-driven NIR photodetector;Responsivity;Specific detectivity;Nanoelectronics

Abstract:Face-centered cubic Cu2S nanowires with length of up to 50 mu m and diameters in the range of 100-500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H-2 as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H-2 as the catalyst. The as-synthesized Cu2S nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm(-1) and a hole mobility (mu(h)) of about 72 cm(2) V-1 s(-1). Further study reveals that p-Cu2S nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of similar to 0.6 Vand a rectification ratio of similar to 300 at +/- 1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage (V-oc) of 0.09 Vand a short circuit current (I-sc) of 65 nAwhen illuminated by the NIR light (790 nm, 0.35 mW cm(-1)), giving rise to a responsivity (R) about 0.8 mA W-1 and specific detectivity (D*) 6.7 x 10(10) cm Hz(1/2) W-1 at zero bias, which suggests the potential of as-synthesized Cu2S nanowires applied in the field of self-driven NIR photodetector.

Co-author:Zhi-Qiang Pan, Zhu Liu, You-Yi Wang, Feng-Xia Liang, Yong- Qiang Yu, Li Wang, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Chun-Yan Wu,Lin-Bao Luo

Document Type:Article

Volume:19

Issue:2

ISSN No.:1388-0764

Translation or Not:no

Date of Publication:2017-01-18