Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects
点击次数：
影响因子：6.6
DOI码：10.1109/TPEL.2024.3430897
发表刊物：IEEE Transactions on Power Electronics
关键字：Robustness, short-circuit protection, silicon carbide (SiC) MOSFETs , soft turn-OFF strategies
摘要：With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) are increasingly finding applications in various scenarios. To ensure the safe operation of SiC mosfet s, there is a pressing need for fast and reliable short-circuit protection methods. This article aims to give a detail overview of the existing short-circuit protection technologies for SiC mosfet s regarding their merits and limitations. First, the challenges associated with short-circuit protection are comprehensively analyzed. Subsequently, thorough comparisons of state-of-the-art short-circuit detection methods and soft turn- off strategies are conducted, respectively. Finally, this work outlines the prospects of short-circuit protection technologies in the aspects of deficiencies and optimization of short-circuit protection in multichip power module with paralleled SiC mosfets.
论文类型：期刊论文
学科门类：工学
文献类型：J
卷号：39
期号：10
页面范围：13081 - 13095
ISSN号：0885-8993
是否译文：否
发表时间：2024-07-19
收录刊物：SCI
发布期刊链接：https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=63