个人信息Personal information
- 硕士生导师
- 教师英文名称：Wang Jena
- 教师拼音名称：Wang Li
- 出生日期：1977-12-05
- 所在单位：电子科学系
- 学历：研究生(博士)毕业
- 性别：女
- 学位：博士学位
- 职称：副教授
- 毕业院校：中国科学院固体物理研究所
- 所属院系：微电子学院
- 学科：微电子学与固体电子学
论文成果
Facial Synthesis of KCu7S4 Nanobelts for Nonvolatile Memory Device Applications
发布时间：2016-02-03 点击次数：
影响因子：6.4
DOI码：10.1039/c5tc03829d
发表刊物：Journal of Materials Chemistry C
摘要：Tetragonal KCu7S4 nanobelts (NBs) with width of 200-600 nm and length of up to hundreds of micrometers were facially synthesized via a solution-based method. Electrical analysis reveals that the as-fabricated NB exhibits typical p-type semiconducting characteristics with an exceptionally high carrier mobility of similar to 870 cm(2) V-1 s(-1), which may be attributed to the quasi-1D conduction path along the c axis in the structure of KCu7S4. A further study of a device based on the Cu/KCu7S4 NB/Au Schottky junction shows a stable memory behavior with a set voltage of about 0.6 V, a current ON/OFF ratio of about 10(4), and a retention time > 10(4) s. Such resistive switching characteristics, according to our analysis are due to the interfacial oxide layers that can efficiently trap the electrons by the oxygen vacancies. This study will offer opportunities for the development of high-performance memory devices with new geometries.
合写作者：Xin-Gang Wang, Zhi-Qiang Pan, You-Yi Wang, Yong-Qiang Yu, Li Wang, Lin-Bao Luo
第一作者：Chun-Yan Wu
通讯作者：Chun-Yan Wu
文献类型：Article
卷号：4
期号：3
页面范围：589-595
ISSN号：2050-7526
是否译文：否
发表时间：2016-01-01