Design and Construction of Ultra-thin MoSe2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection
点击次数：
影响因子：9.9
DOI码：10.1007/s12274-016-1151-5
发表刊物：Nano Research
关键字：molybdenum diselenide;layer transition metal dichalcogenide (TMD);urtrathin nanosheet;heterojunction;ultrafast photoresponse
摘要：Advances in the photocurrent conversion of two-dimensional (2D) transition metal dichalcogenides have enabled the realization and application of ultrasensitive and broad-spectral photodetectors. The requirements of previous devices constantly drive for complex technological implementation, resulting in limits in scale and complexity. Furthermore, the development of large-area and low-cost photodetectors would be beneficial for applications. Therefore, we demonstrate a novel design of a heterojunction photodetector based on solution-processed ultrathin MoSe2 nanosheets to satisfy the requirements of its application. The photodetector exhibits a high sensitivity to visible-near infrared light, with a linear dynamic range over 124 decibels (dB), a detectivity of similar to 1.2 x 10(12) Jones, and noise current approaching 0.1 pA center dot Hz(-1/2) at zero bias. Significantly, the device shows an ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over 32 MHz, which is far better than that of most of the 2D nanostructured and solution-processable photodetectors reported thus far and is comparable to that of commercial Si photodetectors. Combining our results with material-preparation methods, together with the methodology of device fabrication presented herein, can provide a pathway for the large-area integration of low-cost, high-speed photodetectors.
合写作者：Yong-Qiang Yu, Xiao-Li Zhou, Chun-De Wang, Ke-Wei Xu, Yan Zhang, Chun-Yan Wu, Li Wang, Yang Jiang,杨庆
第一作者：XiangShun Geng
通讯作者：Yong-Qiang Yu,杨庆, Yang Jiang
文献类型：Article
卷号：9
期号：9
页面范围：2641-2651
ISSN号：1998-0124
是否译文：否
发表时间：2016-09-01