Core-Shell Silicon Nanowire Array-Cu Nanofilm Schottky Junction for a Sensitive Self-Powered Near-Infrared Photodetector
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影响因子：6.4
DOI码：10.1039/c6tc03856e
发表刊物：Journal of Materials Chemistry C
摘要：A highly sensitive near infrared light (NIR) photodetector was fabricated by coating a thin layer of Cu film onto a vertical n-type SiNW array through a solution based reduction reaction. The as-fabricated coreshell SiNW array/Cu Schottky junction exhibits an obvious rectifying behavior in the dark with a turn-on voltage of similar to 0.5 V and a rectification ratio of about 10(2) at +/- 1.5 V. In addition, it shows a pronounced photovoltaic performance when illuminated by NIR light with a wavelength of 980 nm. Such photovoltaic characteristics can allow the device to detect NIR illumination without exterior power supply. Further device analysis reveals that the self-powered NIR photodetector is capable of monitoring ultrafast optical signals with a frequency as high as 30 kHz. What is more, the present device also has obvious advantages of high responsivity, detectivity, on/off ratio, and response speed. Further theoretical simulation reveals that the good device performance is associated with excellent optical and electrical properties of core-shell heterojunction geometry.
合写作者：Zhi-Qiang Pan, You-Yi Wang, Cai-Wang Ge, Yong-Qiang Yu, Ji-Yu Xu, Li Wang, Lin-Bao Luo
第一作者：Chun-Yan Wu
通讯作者：Lin-Bao Luo
文献类型：Article
卷号：4
期号：46
页面范围：10804-10811
ISSN号：2050-7526
是否译文：否
发表时间：2016-01-01