个人信息Personal information
- 硕士生导师
- 教师英文名称：Wang Jena
- 教师拼音名称：Wang Li
- 出生日期：1977-12-05
- 所在单位：电子科学系
- 学历：研究生(博士)毕业
- 性别：女
- 学位：博士学位
- 职称：副教授
- 毕业院校：中国科学院固体物理研究所
- 所属院系：微电子学院
- 学科：微电子学与固体电子学
论文成果
Controllable Synthesis of p-type Cu2S Nanowires for Self-Driven NIR Photodetector Application
发布时间：2017-01-18 点击次数：
影响因子：2.5
DOI码：10.1007/s11051-016-3736-z
发表刊物：Journal of Nanoparticle Research
关键字：Semiconductor nanostructures;Heterojunction;Self-driven NIR photodetector;Responsivity;Specific detectivity;Nanoelectronics
摘要：Face-centered cubic Cu2S nanowires with length of up to 50 mu m and diameters in the range of 100-500 nm are synthesized on Si substrates through the chemical vapor deposition method using a mixed gas of Ar and H-2 as the carrier gas under a chamber pressure of about 700 Torr. It was found that the growth of quasi 1D nanostructure followed a typical vapor-liquid-solid (VLS) mechanism in which the element Cu was reduced by H-2 as the catalyst. The as-synthesized Cu2S nanowires exhibited typical p-type semiconducting characteristics with a conductivity of about 600 S cm(-1) and a hole mobility (mu(h)) of about 72 cm(2) V-1 s(-1). Further study reveals that p-Cu2S nanowires/n-Si heterojunction exhibits distinct rectifying characteristics with a turn-on voltage of similar to 0.6 Vand a rectification ratio of similar to 300 at +/- 1 V in the dark and a pronounced photovoltaic behavior with an open circuit voltage (V-oc) of 0.09 Vand a short circuit current (I-sc) of 65 nAwhen illuminated by the NIR light (790 nm, 0.35 mW cm(-1)), giving rise to a responsivity (R) about 0.8 mA W-1 and specific detectivity (D*) 6.7 x 10(10) cm Hz(1/2) W-1 at zero bias, which suggests the potential of as-synthesized Cu2S nanowires applied in the field of self-driven NIR photodetector.
合写作者：Zhi-Qiang Pan, Zhu Liu, You-Yi Wang, Feng-Xia Liang, Yong- Qiang Yu, Li Wang, Lin-Bao Luo
第一作者：Chun-Yan Wu
通讯作者：Chun-Yan Wu,Lin-Bao Luo
文献类型：Article
卷号：19
期号：2
ISSN号：1388-0764
是否译文：否
发表时间：2017-01-18