Surface Charge Transfer Induced p-CdS Nanoribbon/n-Si Heterojunctions as Fast-Speed Self-Driven Photodetectors
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影响因子：6.4
DOI码：10.1039/c5tc01016k
发表刊物：Journal of Materials Chemistry C
摘要：Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated. The p-type CdS NRs were realized through a facile surface charge transfer doping approach. A typical as-fabricated p-n heterojuction exhibits excellent rectifying behavior with a rectification ratio up to similar to 2 x 10(3) within +/- 1.5 V, a low turn-on voltage of similar to 0.5 V and a small ideality factor of 1.29. Furthermore, due to the strong photovoltaic effect, the heterojunction is found to be highly sensitive to visible light irradiation at zero bias voltage with a large I-light/I-dark ratio (2 x 10(3)), fast response speed (t(r) = 26 mu s and t(f) = 112 mu s), good reproducibility and long-term stability. The present work suggests great potential of such a heterojunction for future high-speed photodetector applications, and more importantly, signifying the feasibility of applying the surface charge transfer doping technique for constructing novel nano-optoelectronic devices.
合写作者：Fang-Ze Li, Long-Hui Zeng, Linbao Luo, Li Wang, Chun-Yan Wu, Jian-Sheng Jie
第一作者：Chao Xie
通讯作者：Chao Xie
文献类型：Article
卷号：3
期号：24
页面范围：6307-6313
ISSN号：2050-7526
是否译文：否
发表时间：2015-01-01