Core-Shell CdS:Ga-ZnTe:Sb p-n Nano-Heterojunctions: Fabrication and Optoelectronic Characteristics
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影响因子：6.4
DOI码：10.1039/c4tc02943g
发表刊物：Journal of Materials Chemistry C
摘要：In this study, we reported on the construction of p-n junctions based on crystalline Ga-doped CdS-polycrystalline ZnTe nanostructures (NSs) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. It is found that the absorption edge of CdS: Ga-ZnTe: Sb core-shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core-shell p-n junction exhibited obvious rectification characteristics with a low turn-on voltage of similar to 0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and a detectivity of 1.55 x 10(3) A W-1 and 8.7 x 10(13) cm Hz(1/2) W-1, respectively, much higher than other photodetectors with similar device configurations. The generality of this study suggests that the present coaxial CdS: Ga-ZnTe: Sb core-shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.
合写作者：Hong-Wei Song, Zhen-Xing Liu, Xu Ma, Ran Chen, Yong-Qiang Yu, Chun-Yan Wu, Ji-Gang Hu, Yan Zhang, Qiang Lia, Lin-Bao Luo
第一作者：Li Wang
通讯作者：Li Wang
文献类型：Article
卷号：3
期号：12
页面范围：2933-2939
ISSN号：2050-7526
是否译文：否
发表时间：2015-01-01