P-type ZnTe:Ga Nanowires: Controlled Doping and Optoelectronic Device Application
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影响因子：3.9
DOI码：10.1039/c4ra14096f
发表刊物：RSC Advances
摘要：Although significant progress has been achieved in the synthesis and doping of ZnTe nanostructures, it remains a major challenge to rationally tune their transport properties for nanodevice applications. In this work, p-type ZnTe nanowires (NWs) with tunable conductivity were synthesized by employing Ga/Ga2O3 as a dopant via a simple thermal evaporation method. Electrical measurements of back-gate metal-oxide field-effect-transistors based on a single NW revealed that when the Ga content in the ZnTe NWs increases from 1.3 to 5.1 and 8.7%, the hole mobility and hole concentration will increase from 0.0069 to 0.33 to 0.46 cm(2) V-1 s(-1), respectively. It was also found that the photodetector composed of a ZnTe:Ga NW/graphene Schottky diode exhibited high sensitivity to visible light illumination with an on/off ratio as high as 10(2) at reverse bias, with good reproducibility. The responsivity and detectivity were estimated to be 4.17 x 10(3) A W-1 and 3.19 x 10(13) cm Hz(1/2) W-1, higher than other ZnTe nanostructure based photodetectors. It is expected that the ZnTe:Ga NWs with controlled p-type conductivity are promising building blocks for fabricating high performance nano-optoelectronic devices in the future.
合写作者：Shun-Hang Zhang, Rui Lu, Wei Sun, Qun-Ling Fang, Chun-Yan Wu, Ji-Gang Hu, Li Wang
第一作者：Lin-Bao Luo
通讯作者：Lin-Bao Luo
文献类型：Article
卷号：5
期号：18
页面范围：13324-13330
ISSN号：2046-2069
是否译文：否
发表时间：2015-01-01