Impact Factor:3.1

DOI number:10.1109/TED.2020.3001245

Journal:IEEE Transactions on Electron Devices

Key Words:External quantum efficiency (EQE); linear dynamic range (LDR); narrowband photodetector; near-infrared light; silicon

Abstract:Photodetection at a wavelength of about 1060nmis very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of similar to 1 x 10(11) Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of -1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent anti-interference capabilityduring the photodetectionprocess. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.

Co-author:He-Hao Luo, Huan-Huan Zuo, Ji-Qing Tao, Yong-QiangYu, Xiao-PingYang, Mo-LinWang, Ji-Gang Hu, Chao Xie, Di Wu, Lin-Bao Luo

First Author:Li Wang

Correspondence Author:Ji-Gang Hu, Lin-Bao Luo

Document Type:Article

Volume:67

Issue:8

Page Number:3211-3214

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2020-08-01