Impact Factor:9.5

DOI number:10.1021/acsami.0c02827

Journal:ACS Applied Materials & Interfaces

Key Words:p-n heterojunction;near infrared light;narrow band photodetector;spectral selectivity;image sensing

Abstract:Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve the anti-interference ability of the infrared imaging system. While the self-driving effect inherent to the p-n junction is very attractive in optic-electronic integration, the application of the p-n junction in narrow-band photodetectors is limited by the usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe2/silicon p-n junction was reported. The as-fabricated photodetector exhibited typical narrow-band response which shall be ascribed to the slightly smaller band gap of Si than CuGaTe2 and the restricted photocurrent generation region in the p-n heterojunction by optimizing CuGaTe2 thickness. It is observed that when the thickness of CuGaTe2 film is 143 nm, the device exhibits a response peak centered around 1050 nm with a full-width at half-maximum of similar to 118 nm. Further device analysis reveals a specific detectivity of similar to 10(12) Jones and a responsivity of 114 mA/W under 1064 nm illumination at zero bias. It was also found that an image system based on the narrowband CuGaTe2/Si photodetector showed high noise immunity for its spectral selective characteristics.

Co-author:Zhen Li,Ming Li, Shao Li, Ying-Chun Lu, Ning Qi, Jian Zhang, Chao Xie, Chun-Yan Wu, Lin-Bao Luo

First Author:Li Wang

Correspondence Author:Jian Zhang

Document Type:Article

Volume:12

Issue:19

Page Number:21845-21853

ISSN No.:1944-8244

Translation or Not:no

Date of Publication:2020-05-13