Impact Factor:6.4

DOI number:10.1039/c9tc04322e

Journal:Journal of Materials Chemistry C

Abstract:In this study, we report on the synthesis of layered gamma-In2Se3 for broadband photodetector and near infrared light image sensing applications. The layered gamma-In2Se3 nanofilm with a thickness of around 74 nm was deposited onto a n-Si wafer through radio frequency magnetron sputtering. It is found that the as-assembled gamma-In2Se3/n-Si shows an obvious photovoltaic behavior and can work properly as a self-powered broadband photodetector over a wide range of wavelengths (200-2200 nm). Such a unique spectral response beyond the absorption limit of both intrinsic gamma-In2Se3 and n-Si can be ascribed to the existence of defect energy levels between the valence band and the conduction band, as a result of Se substitution of In atoms according to theoretical simulation based on first-principles calculations. Specifically, the gamma-In2Se3/n-Si photodetector has a responsivity of 0.57 A W-1, a specific detectivity of 2.6 x 10(12) Jones and a fast response speed (35/115 mu s for tau(r)/tau(f)) under 808 nm light illumination, respectively, which are slightly better or comparable to other devices with similar geometries. Lastly, it was revealed that the gamma-In2Se3/n-Si heterojunction photodetector can function as an effective near infrared (NIR) light image sensor with a decent spatial resolution, which suggests the great potential of the current device in future NIR optoelectronic systems.

Co-author:Jing-Wei Kang, Bin Wang, Hui-Nan Zhu, Zhong-Jun Li, Shi-Rong Chen, Li Wang, Wen-Hua Yang, Chao Xie, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Zhong-Jun Li, Lin-Bao Luo

Document Type:Article

Volume:7

Issue:37

Page Number:11532-11539

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2019-10-07