Impact Factor:4.9

DOI number:10.1109/LED.2018.2872107

Journal:IEEE Electron Device Letters

Key Words:Transition metal dichalcogenides;van der Waals heterojunction;high speed;bipolar heterojunction

Abstract:Here, we demonstrate a novel 2-D-3-D graphene (Gr)/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterostructure, which allows the combination of the unique properties of 2-D layered materials with the proven merits of well-developed silicon technologies. Significantly, the resultant devices exhibit an ultrahigh response speed of 17 ns with a broad spectral response characteristic, which represents most fast response for 2-D transition metal dichalcogenide (TMD)-based photodetectors and is comparable to that of commercial Si photodetectors. A high responsivity of 0.6 A W-1 and a detectivity of 8 x 10(12) Jones are also achieved. This result suggests a pathway for the fabrication of high-speed photodetectors based on TMDs.

Co-author:Zhi Li, Zhi-Jian Lu, Xiang-Shun Geng, Ying-Chun Lu, Gao-bin Xu, Li Wang, Jian-Sheng Jie

First Author:Yong-Qiang Yu

Correspondence Author:Jian-Sheng Jie

Document Type:Article

Volume:39

Issue:11

Page Number:1688-1691

ISSN No.:0741-3106

Translation or Not:no

Date of Publication:2018-11-01