Impact Factor:6.4

DOI number:10.1039/c5tc01016k

Journal:Journal of Materials Chemistry C

Abstract:Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated. The p-type CdS NRs were realized through a facile surface charge transfer doping approach. A typical as-fabricated p-n heterojuction exhibits excellent rectifying behavior with a rectification ratio up to similar to 2 x 10(3) within +/- 1.5 V, a low turn-on voltage of similar to 0.5 V and a small ideality factor of 1.29. Furthermore, due to the strong photovoltaic effect, the heterojunction is found to be highly sensitive to visible light irradiation at zero bias voltage with a large I-light/I-dark ratio (2 x 10(3)), fast response speed (t(r) = 26 mu s and t(f) = 112 mu s), good reproducibility and long-term stability. The present work suggests great potential of such a heterojunction for future high-speed photodetector applications, and more importantly, signifying the feasibility of applying the surface charge transfer doping technique for constructing novel nano-optoelectronic devices.

Co-author:Fang-Ze Li, Long-Hui Zeng, Linbao Luo, Li Wang, Chun-Yan Wu, Jian-Sheng Jie

First Author:Chao Xie

Correspondence Author:Chao Xie

Document Type:Article

Volume:3

Issue:24

Page Number:6307-6313

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2015-01-01