Impact Factor:6.4

DOI number:10.1039/c4tc02943g

Journal:Journal of Materials Chemistry C

Abstract:In this study, we reported on the construction of p-n junctions based on crystalline Ga-doped CdS-polycrystalline ZnTe nanostructures (NSs) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. It is found that the absorption edge of CdS: Ga-ZnTe: Sb core-shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core-shell p-n junction exhibited obvious rectification characteristics with a low turn-on voltage of similar to 0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and a detectivity of 1.55 x 10(3) A W-1 and 8.7 x 10(13) cm Hz(1/2) W-1, respectively, much higher than other photodetectors with similar device configurations. The generality of this study suggests that the present coaxial CdS: Ga-ZnTe: Sb core-shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.

Co-author:Hong-Wei Song, Zhen-Xing Liu, Xu Ma, Ran Chen, Yong-Qiang Yu, Chun-Yan Wu, Ji-Gang Hu, Yan Zhang, Qiang Lia, Lin-Bao Luo

First Author:Li Wang

Correspondence Author:Li Wang

Document Type:Article

Volume:3

Issue:12

Page Number:2933-2939

ISSN No.:2050-7526

Translation or Not:no

Date of Publication:2015-01-01