Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection
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影响因子：3.1
DOI码：10.1109/TED.2022.3225135
发表刊物：IEEE Transactions on Electron Devices
关键字：Self-powered deep-ultraviolet (DUV) photodetector;spontaneous oxidation;ultrawide bandgap semiconductors
摘要：In this work, we demonstrate the fabrication of CuxO/Ga2O3 heterojunction through the spontaneous oxidation of Cu film into CuxO layer during electron beam evaporation. The heterojunction device presents a ultraviolet (UV)/visible rejection ratio (R-265/R-430) at zero bias of 435, enabling the self-powered deep-UV (DUV) photodetection. Upon 265-nm illumination (light intensity: 21.7 mu W.cm(-2)), the responsivity (R) and specific detectivity (D*) reach 0.97 mA.W-1 and 6.28 x 10(10) Jones, respectively. A fast response speed of 5.34/3.64 ms (tau(r)/tau(f)) has also been observed, which may ascribe to the fully depleted thin CuxO layer and suggest the ability to detect rapidly switched optical signal. This work sheds light on the facile fabrication of beta-Ga2O3 -based self-powered DUV photodetectors.
合写作者：Xi-Shen Guo, Yi-Hang Dai, Zhen Yang, Chun-Yan Wu, Li Wang, Xiang Zhang, Xiu-Juan Wang, Lin-Bao Luo
第一作者：Chen-Yue Zhu
通讯作者：Chun-Yan Wu, Xiu-Juan Wang,Lin-Bao Luo
文献类型：Article
卷号：70
期号：1
页面范围：167-171
ISSN号：0018-9383
是否译文：否
发表时间：2023-01-01