Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability
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影响因子：3.1
DOI码：10.1109/TED.2022.3171501
发表刊物：IEEE Transactions on Electron Devices
关键字：Multispectral;narrowband detection;Schottky junction;Si photodetector;wavelength tunable
摘要：The development of high-performance multispectral photodetector with narrowband and tunable spectral sensitivity is of importance but remains highly challenging to date. Here, we have reported on the fabrication of a Si Au/n-type Si/Au photodetector with tunable narrowband sensitivity not only in ultraviolet but also in near-infrared region, which is related to the controlled charge collection narrowing (CCN) mechanism. What is more, the negative response peak of the device can be readily tuned from 365 to 605 nm, and the positive response peak can be modulated from 938 to 970 nm when the bias varies from 0.1 to -0.1 V. In particular, the full-width at half-maximum is as small as 92 and 117 nm when the negative and positive response peaks approach the ultraviolet short wavelength end and near-infrared long wavelength end, respectively. The opposite polarity of the device responses in ultraviolet-visible and near-infrared regions renders the present Si photodetector potentially important in future multiple band optoelectronic systems.
合写作者：Bo-Han Chen, Chang-Yue Fang, Jun He, Chunyan Wu, Xiang Zhang, Xiao-Ping Yang,Jian-Bo Mao, Jigang Hu, Lin-Bao Luo
第一作者：Li Wang
通讯作者：Li Wang,Lin-Bao Luo
文献类型：Article
卷号：69
期号：6
页面范围：3258-3261
ISSN号：0018-9383
是否译文：否
发表时间：2022-06-01