Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm
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影响因子：3.1
DOI码：10.1109/TED.2020.3001245
发表刊物：IEEE Transactions on Electron Devices
关键字：External quantum efficiency (EQE); linear dynamic range (LDR); narrowband photodetector; near-infrared light; silicon
摘要：Photodetection at a wavelength of about 1060nmis very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of similar to 1 x 10(11) Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of -1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent anti-interference capabilityduring the photodetectionprocess. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.
合写作者：He-Hao Luo, Huan-Huan Zuo, Ji-Qing Tao, Yong-QiangYu, Xiao-PingYang, Mo-LinWang, Ji-Gang Hu, Chao Xie, Di Wu, Lin-Bao Luo
第一作者：Li Wang
通讯作者：Ji-Gang Hu, Lin-Bao Luo
文献类型：Article
卷号：67
期号：8
页面范围：3211-3214
ISSN号：0018-9383
是否译文：否
发表时间：2020-08-01