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王莉

同专业硕导

个人信息Personal information

  • 硕士生导师
  • 教师英文名称:Wang Jena
  • 教师拼音名称:Wang Li
  • 出生日期:1977-12-05
  • 所在单位:电子科学系
  • 学历:研究生(博士)毕业
  • 性别:女
  • 学位:博士学位
  • 职称:副教授
  • 毕业院校:中国科学院固体物理研究所
  • 所属院系:微电子学院
  • 学科:微电子学与固体电子学

论文成果

Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm

发布时间:2020-08-12 点击次数:

影响因子:3.1

DOI码:10.1109/TED.2020.3001245

发表刊物:IEEE Transactions on Electron Devices

关键字:External quantum efficiency (EQE); linear dynamic range (LDR); narrowband photodetector; near-infrared light; silicon

摘要:Photodetection at a wavelength of about 1060nmis very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces of the Si substrate, respectively. The as-assembled device exhibits a tunable peak response near 1060 nm with a full width at half maximum of 107 nm, which could be due to the combined effect of the narrow photo-current generation and the self-filtering effect of the silicon substrate. At zero bias, a specific detectivity of similar to 1 x 10(11) Jones and linear dynamic range about 101 dB are achieved, in spite of the weak absorption of Si at this wavelength. The external quantum efficiency can be improved to 135% under a low bias of -1 V, indicating the existence of gain mechanism during photodetection. Finally, it is also found that the as-assembled near-infrared device shows excellent anti-interference capabilityduring the photodetectionprocess. These results corroborate that the present Si photodetector may find promising application in future near-infrared optoelectronic devices and systems.

合写作者:He-Hao Luo, Huan-Huan Zuo, Ji-Qing Tao, Yong-QiangYu, Xiao-PingYang, Mo-LinWang, Ji-Gang Hu, Chao Xie, Di Wu, Lin-Bao Luo

第一作者:Li Wang

通讯作者:Ji-Gang Hu, Lin-Bao Luo

文献类型:Article

卷号:67

期号:8

页面范围:3211-3214

ISSN号:0018-9383

是否译文:否

发表时间:2020-08-01