Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application
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影响因子：9.5
DOI码：10.1021/acsami.0c02827
发表刊物：ACS Applied Materials & Interfaces
关键字：p-n heterojunction;near infrared light;narrow band photodetector;spectral selectivity;image sensing
摘要：Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve the anti-interference ability of the infrared imaging system. While the self-driving effect inherent to the p-n junction is very attractive in optic-electronic integration, the application of the p-n junction in narrow-band photodetectors is limited by the usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe2/silicon p-n junction was reported. The as-fabricated photodetector exhibited typical narrow-band response which shall be ascribed to the slightly smaller band gap of Si than CuGaTe2 and the restricted photocurrent generation region in the p-n heterojunction by optimizing CuGaTe2 thickness. It is observed that when the thickness of CuGaTe2 film is 143 nm, the device exhibits a response peak centered around 1050 nm with a full-width at half-maximum of similar to 118 nm. Further device analysis reveals a specific detectivity of similar to 10(12) Jones and a responsivity of 114 mA/W under 1064 nm illumination at zero bias. It was also found that an image system based on the narrowband CuGaTe2/Si photodetector showed high noise immunity for its spectral selective characteristics.
合写作者：Zhen Li,李明, Shao Li, Ying-Chun Lu, Ning Qi, Jian Zhang, Chao Xie, Chun-Yan Wu, Lin-Bao Luo
第一作者：Li Wang
通讯作者：Jian Zhang
文献类型：Article
卷号：12
期号：19
页面范围：21845-21853
ISSN号：1944-8244
是否译文：否
发表时间：2020-05-13