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王莉

同专业硕导

个人信息Personal information

  • 硕士生导师
  • 教师英文名称:Wang Jena
  • 教师拼音名称:Wang Li
  • 出生日期:1977-12-05
  • 所在单位:电子科学系
  • 学历:研究生(博士)毕业
  • 性别:女
  • 学位:博士学位
  • 职称:副教授
  • 毕业院校:中国科学院固体物理研究所
  • 所属院系:微电子学院
  • 学科:微电子学与固体电子学

论文成果

Defect-Induced Broadband Photodetection of Layered γ-In2Se3 Nanofilm and Its Application in Near Infrared Image Sensor

发布时间:2019-10-14 点击次数:

影响因子:6.4

DOI码:10.1039/c9tc04322e

发表刊物:Journal of Materials Chemistry C

摘要:In this study, we report on the synthesis of layered gamma-In2Se3 for broadband photodetector and near infrared light image sensing applications. The layered gamma-In2Se3 nanofilm with a thickness of around 74 nm was deposited onto a n-Si wafer through radio frequency magnetron sputtering. It is found that the as-assembled gamma-In2Se3/n-Si shows an obvious photovoltaic behavior and can work properly as a self-powered broadband photodetector over a wide range of wavelengths (200-2200 nm). Such a unique spectral response beyond the absorption limit of both intrinsic gamma-In2Se3 and n-Si can be ascribed to the existence of defect energy levels between the valence band and the conduction band, as a result of Se substitution of In atoms according to theoretical simulation based on first-principles calculations. Specifically, the gamma-In2Se3/n-Si photodetector has a responsivity of 0.57 A W-1, a specific detectivity of 2.6 x 10(12) Jones and a fast response speed (35/115 mu s for tau(r)/tau(f)) under 808 nm light illumination, respectively, which are slightly better or comparable to other devices with similar geometries. Lastly, it was revealed that the gamma-In2Se3/n-Si heterojunction photodetector can function as an effective near infrared (NIR) light image sensor with a decent spatial resolution, which suggests the great potential of the current device in future NIR optoelectronic systems.

合写作者:Jing-Wei Kang, Bin Wang, Hui-Nan Zhu, Zhong-Jun Li, Shi-Rong Chen, Li Wang, Wen-Hua Yang, Chao Xie, Lin-Bao Luo

第一作者:Chun-Yan Wu

通讯作者:Zhong-Jun Li, Lin-Bao Luo

文献类型:Article

卷号:7

期号:37

页面范围:11532-11539

ISSN号:2050-7526

是否译文:否

发表时间:2019-10-07