Graphene/MoS2/Si Nanowires Schottky-NP Bipolar van der Waals Heterojunction for Ultrafast Photodetectors
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影响因子：4.9
DOI码：10.1109/LED.2018.2872107
发表刊物：IEEE Electron Device Letters
关键字：Transition metal dichalcogenides;van der Waals heterojunction;high speed;bipolar heterojunction
摘要：Here, we demonstrate a novel 2-D-3-D graphene (Gr)/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterostructure, which allows the combination of the unique properties of 2-D layered materials with the proven merits of well-developed silicon technologies. Significantly, the resultant devices exhibit an ultrahigh response speed of 17 ns with a broad spectral response characteristic, which represents most fast response for 2-D transition metal dichalcogenide (TMD)-based photodetectors and is comparable to that of commercial Si photodetectors. A high responsivity of 0.6 A W-1 and a detectivity of 8 x 10(12) Jones are also achieved. This result suggests a pathway for the fabrication of high-speed photodetectors based on TMDs.
合写作者：Zhi Li, Zhi-Jian Lu, Xiang-Shun Geng, Ying-Chun Lu, Gao-bin Xu, Li Wang, Jian-Sheng Jie
第一作者：Yong-Qiang Yu
通讯作者：Jian-Sheng Jie
文献类型：Article
卷号：39
期号：11
页面范围：1688-1691
ISSN号：0741-3106
是否译文：否
发表时间：2018-11-01