High Performance Nonvolatile Memory Devices Based on Cu2−xSe Nanowires
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影响因子：4.0
DOI码：10.1063/1.4828881
发表刊物：Applied Physics Letters
摘要：We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 10(8), much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.
合写作者：Yi-Liang Wu, Wen-Jian Wang, Dun Mao, Yong-Qiang Yu, Li Wang, Jun Xu, Ji-Gang Hu, Lin-Bao Luo
第一作者：Chun-Yan Wu
通讯作者：Chun-Yan Wu
文献类型：Article
卷号：103
期号：19
ISSN号：0003-6951
是否译文：否
发表时间：2013-11-04