High-Speed Ultraviolet-Visible-Near Infrared Photodiodes Based on P-ZnS Nanoribbon–n-Silicon Heterojunction
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影响因子：3.1
DOI码：10.1039/c2ce26730f
发表刊物：CrystEngComm
摘要：Ag-doped p-type ZnS nanoribbons (NRs) with a high hole concentration of 5.1 x 10(18) cm(-3) and high carrier mobility of 154.0 cm(2) V-2 s(-1) were synthesized by using silver sulfide (Ag2S) as the Ag source. Excellent ohmic contact to p-ZnS NR with specific contact resistivity as low as 5.6 x 10(-7) Omega cm(2) was achieved by using bilayer Cu (4 nm)-Au electrode, which according to the depth profiling X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analysis can help to form a thin Cu2S interfacial layer between the electrode. Based on the high quality ZnS NRs and achievement on ohmic contact, p-n photodiodes have been constructed from the p-ZnS nanoribbon (NR)-n-Si heterojunction with a response speed as high as similar to 48 mu s (rise time). Furthermore, the device also exhibits stable optoelectrical properties with high sensitivity to UV-visible-NIR light and an enhancement of responsivities of 1.1 x 10(3) AW(-1) for 254 nm under a reverse bias of 0.5 V. These generality of the above results shows that the p-ZnS NR-n-Si heterojunction will have potential applications in future high-performance photodetectors.
合写作者：Long-Hui Zeng, Lin-Bao Luo, Yan Zhang, Zhi-Feng Zhu, Chun-Yan Wu, Biao Nie, Li Wang, Yu-Gang Zhang, Yang Jiang
第一作者：Yong-Qiang Yu
通讯作者：Yong-Qiang Yu
文献类型：Article
卷号：15
期号：8
页面范围：1635-1642
ISSN号：1466-8033
是否译文：否
发表时间：2013-01-01