Silicon Microwires Arrays:Synthesis, Mechanism, and Electrical Property
点击次数：
DOI码：10.1166/jnan.2012.1075
发表刊物：Journal of Nanoengineering and Nanomanufacturing
关键字：CHEMICAL ETCHING; FIELD EFFECT TRANSISTOR; GOLD-CATALYZED; SILICON MICROWIRES
摘要：Wafer-scale uniform silicon microwires (SiMWs) arrays were fabricated via gold-assisted chemical etching of silicon wafers. The diameter of SiMWs can be precisely controlled by etching duration and over-developing the patterned photoresist dots, so that SiMWs with diameters of 2.5, 2.0, 1.5, 1.0 and 0.6 μm were readily obtained. The etching direction was always vertical to the wafer surface, thus SiMWs with a direction along, [100] [110], [111] and [311] were readily fabricated from wafers of the corresponding orientation. The gold-catalyzed electrochemical etching mechanism was investigated via monitoring Au3+ concentration during etching, as well as the effects of etching time, metal film thickness, and wafer doping level. The transport characteristics of field-effect transistors based on individual SiMW revealed a typical p-type semiconducting behavior, with an on/off ratio as high as 103, a hole mobility of 32.7 cm2 V–1 S–1 at V ds = –0.06 V, and a hole concentration of 8.90 × 1016 cm–3.
合写作者：Feng-Xia Liang,Jian-Sheng Jie, Biao Nie, Fang-Ze Li, Peng Lv, Yong-Qiang Yu, Zhi-Feng Zhu, Qiang Li, Li Wang, Chun-Yan Wu
第一作者：Lin-Bao Luo
文献类型：Article
卷号：2
期号：2
页面范围：202-210
ISSN号：2157-9326
是否译文：否
发表时间：2012-06-01