p-CdTe Nanoribbon/n-silicon Nanowires Array Heterojunctions: Photovoltaic Devices and Zero-Power Photodetectors
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影响因子：3.1
DOI码：10.1039/c2ce25791b
发表刊物：CrystEngComm
摘要：Nano-heterojunction composed of single Sb-doped p-type CdTe nanoribbon (CdTeNR) and n-type silicon nanowires (SiNWs) array was successfully fabricated. The p-n heterojunction exhibited excellent rectifying behavior with a rectification ratio of 10(5) at +/- 2 V in the dark. Due to the matched band gap of CdTeNR with SiNWs, as well as the efficient light absorption of the SiNWs array, pronounced photovoltaic characteristics with energy conversion efficiency up to 2.1% under AM 1.5 G was achieved. Furthermore, the heterojunction device could serve as high-performance zero-power photodetector operated in the visible to near-infrared (NIR) range with good stability, high sensitivity, and fast response speed. It is expected that the p-CdTeNR/n-SiNWs array heterojunctions will find important applications in future nano-optoelectronic devices.
合写作者：Lin-Bao Luo, Long-Hui Zeng, Long Zhu, Jing-Jing Chen, Biao Nie, Ji-Gang Hu, Qiang Li, Chun-Yan Wu, Li Wang, Jian-Sheng Jie
第一作者：Chao Xie
通讯作者：Lin-Bao Luo
文献类型：Article
卷号：14
期号：21
页面范围：7222-7228
ISSN号：1466-8033
是否译文：否
发表时间：2012-01-01