Impact Factor:3.1

DOI number:10.1109/TED.2023.3267754

Journal:IEEE Transactions on Electron Devices

Key Words:InP photodetector;narrowband;near-infrared;passivation;Schottky junction

Abstract:Near-infrared narrowband photodetection between 920 and 960 nm is quite appealing for many applications, such as optical communication, security monitoring, and machine vision, owing to the weak photon-scattering effect and the low intensity of sunlight in this range. Herein, a self-powered narrowband InP photodetector is realized based on a junction-controlled charge-collection narrowing (JCCN) mechanism, exhibiting a peak response centered at 954 nm with a full width at half maximum (FWHM) of 17 nm. Thanks to the reflection of the Schottky electrode and the passivation of the Al2O3 layer, the peak specific detectivity of the device can be up to 4.5 × 1011 Jones and a linear dynamic range (LDR) of ∼99 dB is achieved under the illumination of 954 nm. Moreover, the device shows long-term stability and excellent repeatability with a −3 dB frequency of 87.3 kHz. Furthermore, unless the wavelength of the background light is in the range of 945–967 nm, the crosstalk value of the device remains below −10 dB. These results signify that the present InP photodetector is a promising building block for future near-infrared optoelectronic systems.

Co-author:Xiu-Dong He, Quan-You Wang, Ning Qi, Song-Yun Tian, Mo-Lin Wang, Chun-Yan Wu, Ji-Gang Hu, Lin-Bao Luo

First Author:Li Wang

Correspondence Author:Li Wang, Lin-Bao Luo

Document Type:Article

Volume:70

Issue:6

Page Number:3145-3148

ISSN No.:0018-9383

Translation or Not:no

Date of Publication:2023-05-01