Impact Factor:4.0

DOI number:10.1063/1.4828881

Journal:Applied Physics Letters

Abstract:We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 10(8), much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

Co-author:Yi-Liang Wu, Wen-Jian Wang, Dun Mao, Yong-Qiang Yu, Li Wang, Jun Xu, Ji-Gang Hu, Lin-Bao Luo

First Author:Chun-Yan Wu

Correspondence Author:Chun-Yan Wu

Document Type:Article

Volume:103

Issue:19

ISSN No.:0003-6951

Translation or Not:no

Date of Publication:2013-11-04