DOI number:10.1166/jnan.2012.1075

Journal:Journal of Nanoengineering and Nanomanufacturing

Key Words:CHEMICAL ETCHING; FIELD EFFECT TRANSISTOR; GOLD-CATALYZED; SILICON MICROWIRES

Abstract:Wafer-scale uniform silicon microwires (SiMWs) arrays were fabricated via gold-assisted chemical etching of silicon wafers. The diameter of SiMWs can be precisely controlled by etching duration and over-developing the patterned photoresist dots, so that SiMWs with diameters of 2.5, 2.0, 1.5, 1.0 and 0.6 μm were readily obtained. The etching direction was always vertical to the wafer surface, thus SiMWs with a direction along, [100] [110], [111] and [311] were readily fabricated from wafers of the corresponding orientation. The gold-catalyzed electrochemical etching mechanism was investigated via monitoring Au3+ concentration during etching, as well as the effects of etching time, metal film thickness, and wafer doping level. The transport characteristics of field-effect transistors based on individual SiMW revealed a typical p-type semiconducting behavior, with an on/off ratio as high as 103, a hole mobility of 32.7 cm2 V–1 S–1 at V ds = –0.06 V, and a hole concentration of 8.90 × 1016 cm–3.

Co-author:Feng-Xia Liang,Jian-Sheng Jie, Biao Nie, Fang-Ze Li, Peng Lv, Yong-Qiang Yu, Zhi-Feng Zhu, Qiang Li, Li Wang, Chun-Yan Wu

First Author:Lin-Bao Luo

Document Type:Article

Volume:2

Issue:2

Page Number:202-210

ISSN No.:2157-9326

Translation or Not:no

Date of Publication:2012-06-01