个人简介
王庆贺，副教授，硕士生导师。博士毕业于香港大学电机电子工程系，随后在香港大学物理系进行博士后研究。现任合肥工业大学集成电路创新学院“黄山学者”学术骨干（人才引进）。博士前就职于京东方科技集团，担任大尺寸OLED背板开发部高级研究员。曾主持京东方技术研发项目以及参与国家自然科学基金、香港研究资助局和香港创新科技基金等资助项目。迄今，在IEEE Electron Device Letters、IEEE Transactions on Electron Devices、Applied Physics Letters等半导体器件领域权威期刊/会议上共发表学术论文20篇。共被授权国内外发明专利160余项，其中授权中国发明专利120余项，授权美国发明专利40余项。目前主要研究方向包括：1）高k栅控MOSFET器件与物理；2）超宽禁带Ga2O3器件与应用；3）新型非晶氧化物半导体器件与集成。
近五年代表性论著：
1. Q. H. Wang, H. Su, and P. T. Lai, "A Channel-Carrier Mobility Model with Gate Screening Effect for Thin-Film Transistor with High-k Gate Dielectric," IEEE Electron Device Letters, vol. 47, no. 1, pp. 92-95, 2026.
2. Q. H. Wang, Y. H. Deng, L. Liu, J. P. Xu, and P. T. Lai, "Effects of Gate-Electrode Plasmons on Remote Phonon Scattering in Thin-Film Transistor with Perovskite Barium Titanate as High-k Gate Dielectric," Applied Physics Letters, vol. 128, no. 16, 2026.
3. Q. H. Wang, H. Sun, P. T. Lai, "Strength of remote phonon scattering in metal-gate thin-film transistors with high-k gate dielectric," IEEE EDSSC, 2026.
4. Q. H. Wang, Y. H. Deng, Y. X. Ma, L. Liu, J. P. Xu, and P. T. Lai, "Effects of Temperature on Surface Plasmon Resonance in Organic Thin-Film Transistor," Applied Physics Letters, vol. 126, no. 1, pp. 011602, 2025.
5. Q. H. Wang, Y. H. Deng, H. Sun, J. P. Xu, and P. T. Lai, "Hysteresis-Free High-Performance Pentacene Organic Thin-Film Transistor by Sputtering Amorphous Barium Titanate as Ultrathin High-k Gate Dielectric," IEEE Transactions on Electron Devices, vol. 71, no. 10, pp. 6268, 2024.
6. Q. H. Wang, H. Sun, Y. X. Ma, H. Su, and P. T. Lai, "Impact of Low-Frequency Phonons in High-k Gate Dielectric on Channel Carrier Mobility of InGaZnO Thin-Film Transistor," IEEE SISC, 2024.
7. H. Sun, Y. H. Deng, Q. H. Wang, P. T. Lai, "Choice of metal as gate electrode of thin-film transistor with high-k gate dielectric," IEEE Electron Device Letters, vol. 46, no. 2, pp. 286-289, 2025.
8. H. Sun, Y. H. Deng, Q. H. Wang, W. M. Tang, and P. T. Lai, "Impact of gate-electrode material on channel-carrier mobility of thin film transistor with high-k gate dielectric," IEEE Electron Device Letters, vol. 45, no. 7, pp. 1197-1200, 2024.
9. Y. H. Deng, R. Su, W. Jiang, H. Sun, Q. H. Wang, L. Liu, J. Xu, and P. T. Lai, "Improved Electrical Uniformity and Performance via Low-Cost Hybrid Wet Transfer Method for Van Der Waals Source/Drain Contact Formation in MoS2 Field-Effect Transistors," IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7943-7947, 2024.
10. Y. X. Ma, Q. H. Wang, H. Chen, P. T. Lai, and W. M. Tang, "NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors," Physica status solidi (RRL)–rapid research letters, vol. 17, no. 9, pp. 2300049, 2023.
近五年代表性专利：
1. Wang Qinghe, et al., "Display substrate, preparation method thereof,and display device," US12568746B2, 2026. (美国授权发明)
2. Wang Qinghe, et al., "Thin film transistor,method for manufacturing the same,shift register and gate driving circuit," US12237422B2, 2025. (美国授权发明)
3. Wang Qinghe, et al., "Display substrate including an auxiliary cathode structure and display apparatus having the same," US11910636B2, 2024. (美国授权发明)
4. Wang Qinghe,et al., "Thin film transistor,array substrate,and method for fabricating the same," US11257955B2, 2022. (美国授权发明)
5. Wang Qinghe, et al., "Thin Film Transistor, Display Panel and Preparation Method Thereof,and Display Apparatus," US11335710B2, 2022. (美国授权发明)
6. Wang Qinghe, et al., "Pressure sensing unit and pressure sensor,pressure sensing device," US11287333B2, 2022. (美国授权发明)
7. Wang Qinghe, et al., "Display substrate and preparation method thereof,display panel,and display device," US10930726B2, 2021. (美国授权发明)
8. Wang Qinghe, et al., "Light source structure and lighting device," US10928050B2, 2021. (美国授权发明)
9. Wang Qinghe, et al., "Transistor acoustic sensor element and method for manufacturing the same,acoustic sensor and portable device," US11043644B2, 2021. (美国授权发明)
10. Wang Qinghe, et al., "Chemical sensing unit,chemical sensor,and chemical sensing device electrically coupled to light emitting diode," US10976281B2, 2021. (美国授权发明)
本课题组长期招收对高迁移率MOSFET、宽禁带半导体、非晶氧化物等研究方向感兴趣的硕士研究生、本科生，欢迎有意向的同学将个人简历发送至我的邮箱：qhwang@hfut.edu.cn。