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Next One:[7] Z. Su, Y. Yan, H. Sun, and C. Zuo, “5-bit high-linearity UV-stimulated synaptic device based on MoS₂/GaN heterostructure,” in Proc. IEEE Electron Devices Technology and Manufacturing Conf. (EDTM), Mar. 9–12, 2025. (第一作者，EI，IEEE国际会议);
