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Substantial and stable magnetoresistance and spin conductance in phosphorene-based spintronic devices with Co electrodes:Physical Chemistry Chemical Physics,2021,23(17):10573–10579.
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Two-Dimensional Auxetic GeSe2 Material with Ferroelasticity and Flexoelectricity.:The Journal of Physical Chemistry C,2021,125(36):19666–19672.
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Large tunneling magnetoresistance in spinfiltering 1T-MnSe2/h-BN van der Waals magnetic tunnel junction.:Nanoscale,2023,15(18):8447-8455.
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Gate-controlled spin filter, spin valve, and negative differential resistance in cold metal/bipolar magnetic semiconductor lateral homologous heterojunctions.:Physical Review B,2024,109(5):054428.
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Two-dimensional multifunctional metal–organic frameworks with large in-plane negative Poisson ratios and photocatalytic water splitting properties.:Materials Horizons,2025,12(2):480-486.