Impact Factor:4.6
DOI number:10.1109/JESTPE.2023.3287576
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
Key Words:Current control, digital control, gate drivers, semiconductor device reliability, wide band gap semiconductors
Abstract:Silicon carbide (SiC) power devices have been extensively for high-power-density application scenarios. To increase the current rating, SiC devices are usually connected in parallel. However, the mismatching current brought by unbalanced electrical parameters can increase the current stress of a device and pose a reliability concern for the converter system. Aiming at addressing the current imbalance for paralleled SiC devices, this article reports the application of an improved active gate driver (AGD) on the paralleled SiC MOSFETs to address the current imbalance problems. The three-level driver voltage can minimize the overshoot voltage and current. The adjustable turn-on voltage and gate signal delay time can realize the current sharing of both static and dynamic processes. Current sensors and a digital controller are utilized for close-loop control. The functionality of the proposed AGD is validated in continuous operating experiments.
Indexed by:Journal paper
Discipline:Engineering
Document Type:J
Volume:12
Issue:2
Page Number:1372 - 1384
ISSN No.:2168-6777
Translation or Not:no
Date of Publication:2023-06-22
Included Journals:SCI
Links to published journals:https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245517