Impact Factor:6.6
DOI number:10.1109/TPEL.2024.3430897
Journal:IEEE Transactions on Power Electronics
Key Words:Robustness, short-circuit protection, silicon carbide (SiC) MOSFETs , soft turn-OFF strategies
Abstract:With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) are increasingly finding applications in various scenarios. To ensure the safe operation of SiC mosfet s, there is a pressing need for fast and reliable short-circuit protection methods. This article aims to give a detail overview of the existing short-circuit protection technologies for SiC mosfet s regarding their merits and limitations. First, the challenges associated with short-circuit protection are comprehensively analyzed. Subsequently, thorough comparisons of state-of-the-art short-circuit detection methods and soft turn- off strategies are conducted, respectively. Finally, this work outlines the prospects of short-circuit protection technologies in the aspects of deficiencies and optimization of short-circuit protection in multichip power module with paralleled SiC mosfets.
Indexed by:Journal paper
Discipline:Engineering
Document Type:J
Volume:39
Issue:10
Page Number:13081 - 13095
ISSN No.:0885-8993
Translation or Not:no
Date of Publication:2024-07-19
Included Journals:SCI
Links to published journals:https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=63