副教授，硕士生导师。英国谢菲尔德大学博士，曾在谢菲尔德大学-英国国家宽禁带半导体研发中心从事博士后研究工作。
长期致力于氮化镓（GaN）、氮化铝（AlN）等第三代（宽禁带）半导体材料及光电子器件研究，主要开展MOCVD外延生长、材料与器件性能调控以及芯片制程等方面的科研工作。先后主持国家自然科学基金面上项目、国家自然科学基金青年项目、安徽省自然科学基金、中央高校基本科研业务费专项资金项目，以及多项校企联合横向科研项目。注重基础研究与产业需求相结合，积极推动科研成果转化与工程应用，围绕产业发展中的关键科学问题和技术难题开展协同攻关。
目前，已在 Science Advances、IEEE Electron Device Letters、Applied Physics Letters、IEEE Transactions on Electron Devices、Advanced Optical Materials、Optics Letters、Optics Express 等重要SCI期刊以第一作者或通讯作者发表学术论文30余篇，并担任 Optics Letters、Optics Express 等SCI期刊审稿人。已获授权专利10余项。
在研究生培养方面，注重学生科研创新能力与实践能力的提升。所指导研究生中，1人获评安徽省优秀研究生，2人获评校级优秀研究生，所培养研究生均获得校级奖学金。
纵向科研项目：
1. 国家自然科学基金面上项目，2027-2030，主持
2. 国家自然科学基金青年项目，2023-2025，主持
3. 安徽省自然科学基金青年项目，2022-2023，主持
4. 合肥工业大学学术新人提升计划，2023-2024，主持
横向科研项目：
1. 企业委托类项目，2023-2026，主持 (III族氮化物材料与器件开发)
2. 企业委托类项目，2020-2022，主持 (氮化镓外延工艺开发)
3. 企业委托类项目，2019-2020，主持 (氮化镓晶体外延工艺开发)
4. 企业委托类项目，2017-2019，主持 (氮化镓LED器件的研发)
[1] K. Xing*, Z. Ru, L. Lin, J. Cai, H. Wang, H. Zeng, and X. Jiang, “Low-voltage GaN tunnel junctions enabled by a thermally reconstructed InGaN sacrificial interlayer,” Applied Physics Letters 129, 113304 (2026).
[2] K. Xing*, J. Cai, Z. Ru, C. Li, L. Lin, X. Yang, X. Chen, Y. Sang, Z. Zhuang, and B. Liu, “Buried V-pit templates for 20.3% peak EQE at 640 nm in InGaN red LEDs,” IEEE Electron Device Letters 47, 1870–1873 (2026).
[3] K. Xing*, H. Wang, L. Lin, Z. Jin, Z. Pan, X. Yang, Z. Zhuang, C. Li, Y. Sang, T. Tao, and B. Liu, “Impact of template patterning dimensions on the performance of InGaN-based red light-emitting diodes,” IEEE Transactions on Electron Devices 73, 394 (2026).
[4] Y. Sang, X. Xu, Y. Wu, G. Feng, X. Zhang, F. Zhuo, Z. Jin, H. Guo, T. Tao, K. Xing*, X. Wang, Z. Zhuang, R. Zhang, H. N. Alshareef, and B. Liu, “Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy,” Science Advances 11, eadw5005 (2025).
[5] K. Xing*, H. Zeng, Z. Ru, Y. Zhang, Z. Jin, Z. Pan, X. Jiang, H. Wang, J. Cai, and L. Lin, “InGaN-based red LEDs with 682 nm emission and 9.2% EQE enabled by a stress-relief template,” Journal of Alloys and Compounds 1038, 182772 (2025).
[6] K. Xing*, X. Jiang, J. Cai, H. Zeng, H. Wang, Z. Ru, and L. Lin, “Spectrally stable red c-plane InGaN-based LEDs enabled by composition-graded AlGaN barriers,” Optics Letters 50, 5085–5088 (2025).
[7] Y. Zhang, H. Sun, Z. Zhuang, T. Tao, K. Xing*, B. Liu, and Y. Ye, “Semi-polar (20–21) GaN microwire LED fabricated by laser lift-off and mechanical bending,” Optics Letters 50, 4338 (2025).
[8] X. Wang, S. Gao, Z. Han, X. Zhang, H. Chen, K. Xiang, M. Ye, J. Qiu, C. Wu, X. Yang, T. Zhang, Q. Gao, and K. Xing*, “High performance self-powered p⁺-GaN/n⁻-ZnO/Au UV heterojunction phototransistor with 3D interconnected ZnO nanowire network for solar-blind imaging and optical communication,” Advanced Optical Materials 13, 2401869 (2025).
[9] K. Xing*, Z. Pan, H. Wang, Y. Sang, Y. Zhang, T. Tao, Z. Zhuang, R. Zhang, and B. Liu, “Demonstration of 633-nm InGaN-based red light-emitting diodes on a semipolar (11–22) GaN template,” Optics Communications 583, 131749 (2025).
[10] K. Xing*, Z. Jin, H. Zeng, Z. Pan, H. Wang, X. Jiang, and Q. Chen, “Miniature InGaN-based LEDs operating at a wavelength of 672 nm with an external quantum efficiency of 9.1% fabricated on a GaN template layer,” Applied Physics Letters 125, 261104 (2024).
[11] C. Li, Y. Li, Y. Sang, Z. Zhuang, D. Tang, K. Xing*, F. Zhuo, Y. Bian, T. Liu, T. Li, T. Zhi, T. Tao, D. Iida, K. Ohkawa, X. Wang, R. Zhang, and B. Liu, “Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration,” Applied Physics Letters 125, 242112 (2024).
[12] Y. Sang, Z. Zhuang, K. Xing*, D. Zhang, J. Yan, Z. Jiang, C. Li, K. Chen, Y. Ding, T. Tao, D. Iida, K. Wang, C. Li, K. Huang, K. Ohkawa, R. Zhang, and B. Liu, “High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact,” Applied Physics Letters 124, 142103 (2024).
[13] Y. Sang, Z. Zhuang, K. Xing*, Z. Jiang, C. Li, F. Xu, D. Zhang, J. Yu, J. Zhao, T. Zhi, T. Tao, C. Li, K. Huang, K. Ohkawa, R. Zhang, and B. Liu, “Optimizing Al composition in barriers for InGaN amber micro-light-emitting diodes with high wall-plug efficiency,” IEEE Electron Device Letters 45, 76–79 (2024).
[14] K. Xing*, J. Hu, Z. Pan, Z. Xia, Z. Jin, L. Wang, X. Jiang, H. Wang, H. Zeng, and X. Wang, “Demonstration of 651 nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer,” Optics Express 32, 11377 (2024).
[15] K. Xing*, Z. Jin, Z. Xia, J. Hu, X. Yang, Y. Sang, T. Tao, Z. Zhuang, R. Zhang, and B. Liu, “Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs,” Optics Express 32, 29474 (2024).
[16] J. Hu, K. Xing*, Z. Xia, Y. Sang, X. Yang, T. Tao, Z. Zhuang, R. Zhang, and B. Liu, “Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template,” Applied Physics Letters 123, 111107 (2023).
[17] K. Xing*, Z. Xia, G. Xie, J. Wang, L. Wang, and X. Jiang, “Achieving InGaN-based red light-emitting diodes by increasing the growth pressure of quantum wells,” IEEE Photonics Technology Letters 35, 1439 (2023).
[18] K. Xing*, G. Xie, X. Cheng, Y. Zhang, and Q. Chen, “Non-polar a-plane AlN epitaxial films on r-plane sapphire with greatly reduced defect densities obtained by high-temperature annealing,” Journal of Crystal Growth 597, 126855 (2022).
[19] Y. Liang, M. Ma, X. Zhong, C. Xie, X. Tong, K. Xing*, and C. Wu, “Multilayered PdTe₂/GaN heterostructures for visible-blind deep-ultraviolet photodetection,” IEEE Electron Device Letters 42, 1192 (2021).
[20] J. Wang, S. Cao, L. Yang, Y. Zhang, K. Xing*, X. Lu, and J. Xu, “Metastable marcasite NiSe₂ nanodendrites on carbon fiber clothes to suppress polysulfide shuttling for high-performance lithium–sulfur batteries,” Nanoscale 13, 16487 (2021).
[21] K. Xing*, X. Cheng, L. Wang, S. Chen, Y. Zhang, and H. Liang, “Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing,” Journal of Crystal Growth 570, 126207 (2021).
[22] K. Xing*, C. Tseng, L. Wang, P. Chi, J. Wang, P. Chen, and H. Liang, “Semi-polar (11–22) GaN epitaxial films with significantly reduced defect densities grown on m-plane sapphire by metal organic chemical vapor deposition,” Applied Physics Letters 114, 131105 (2019).
[23] K. Xing*, S. Chen, X. Tao, C. Lee, J. Wang, Q. Xu, and H. Liang, “Impact of 3D growth and SiNₓ interlayer on the quality of (11–22) semi-polar GaN grown on m-plane sapphire,” Applied Physics Express 12, 115501 (2019).
[24] K. Xing*, J. Wang, L. Wang, X. Tao, S. Chen, and H. Liang, “Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO₂-masked patterned sapphire substrate,” Applied Physics Express 12, 105501 (2019).
已授权专利：
1. 邢琨(2020)，非极性面Ⅲ族氮化物外延结构及其制备方法，CN109148654B
2. 邢琨(2020)，一种氮化镓基纳米柱阵列的制备方法，CN107424912B
3. 邢琨(2019)，一种氮化镓纳米孔洞的制备方法，CN107978662B
4. 邢琨(2019)，半极性氮化镓外延层结构以及发光二极管，CN209859968U
5. 邢琨(2017)，一种氮化铝复合缓冲层及氮化镓基半导体器件，CN206672959U
课题组具备第三代半导体材料及光电子器件外延生长、芯片制备、测试表征等完善的实验条件。课题组每年招收研究生2-3名，欢迎有志于第三代半导体光电子材料与芯片领域研究的同学加入课题组。
