个人信息Personal information
- 硕士生导师
- 教师英文名称：Wang Jena
- 教师拼音名称：Wang Li
- 出生日期：1977-12-05
- 所在单位：电子科学系
- 学历：研究生(博士)毕业
- 性别：女
- 学位：博士学位
- 职称：副教授
- 毕业院校：中国科学院固体物理研究所
- 所属院系：微电子学院
- 学科：微电子学与固体电子学
论文成果
Deep-Level Impurity Enabled Planar Filterless Narrowband Near-Infrared Si Photodetector
发布时间：2024-03-21 点击次数：
影响因子：4.9
DOI码：10.1109/LED.2024.3351836
发表刊物：IEEE Electron Device Letters
关键字：Narrowband,deep level impurity,planar-type,Si photodetector,near-infrared
摘要：Near-infrared narrowband photodetectors are extensively used in fire alarms, industrial process control, diagnosis of heating systems, etc., owing to their strong anti-interference ability and high thermal sensitivity. In this study, a near-infrared narrowband Si photodetector with a simple Schottky structure was developed via deep-level Au-atom doping to control the recombination processes of the photogenerated carriers. The wavelength selectivity and sensitivity of the device were effectively tuned by modulating both the doping temperature and incident angle. Its peak detectivity at 1080 nm was 1.84×1012 Jones with a full-width at half-maximum of 101 nm, and the −3 dB bandwidth of the device was estimated to be 4.6 kHz (rise time of 22 μs and fall time of 74 μs ). Furthermore, owing to its planar structure and simple fabrication process, the present narrowband photodetector can be easily combined with other broadband photodiodes to effectively map the high-temperature area of a target object and provide further temperature-gradient change information. This study opens up a new avenue for developing planar-type narrowband photodetectors suitable for on-chip application in next-generation near-infrared optoelectronic systems.
合写作者：Yu-Jian Liu, Yi-Meng Gao, Mo-Lin Wang, Guang-Bin Zhang, Chun-Yan Wu, Zhi-GuoZhu, Xiang Zhang, Feng-Xia Liang, Lin-Bao Luo, Li Wang
第一作者：Jia-Le Xing
通讯作者：Lin-Bao Luo, Li Wang
文献类型：Journal Paper
卷号：45
期号：3
页面范围：440-443
ISSN号：0741-3106
是否译文：否
发表时间：2024-01-09