Ultra-Sensitive Narrow-Band P-Si Schottky Photodetector With Good Wavelength Selectivity and Low Driving Voltage
点击次数：
影响因子：4.9
DOI码：10.1109/LED.2023.3331048
发表刊物：IEEE Electron Device Letters
关键字：Narrowband photodetector;silicon;wavelength selectivity;gain mechanism
摘要：Narrowband photodetectors have attracted considerable attention owing to their ability to suppress interference from nontarget wavelengths. However, operation of sensitive narrowband detection usually requires a high driving voltage, which leads to high power consumption and severe degradation of device performance. In this study, a narrowband 1050 nm photodetector with high sensitivity and excellent wavelength selectivity was realized using a simple p -type Si Schottky junction. The device exhibited a high responsivity of 810 mA/W and a large linear dynamic range of 128 dB at zero bias. At a low bias voltage of -3 V, its external quantum efficiency increased to 6.9 x 10(3) %, with a full width at half maximum of approximately 74 nm. This outstanding device performance can be ascribed to the unique geometry of dual Ti /Ag Schottky electrode and the gain mechanism derived from the large transit-time difference between the photogenerated electrons and holes. This study opens new avenues for the development of highly sensitive narrowband photodetectors with low driving voltages in the future.
合写作者：Yi-Fei Wang, Shao-Jian Long, Yan Pan, Xiao-Ping Yang, Chun-Yan Wu, YanWang, Lin-Bao Luo, Li Wang
第一作者：Huan-Huan Zuo
通讯作者：Lin-Bao Luo, Li Wang
文献类型：Article
卷号：45
期号：1
页面范围：68-71
ISSN号：0741-3106
是否译文：否
发表时间：2023-11-08