Plasma-Enhanced Si-SiC Low-Temperature Bonding Based on Graphene Composite Slurry Interlayer
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影响因子：3.0
DOI码：10.1016/j.matlet.2021.129710
发表刊物：Materials Letters
关键字：Graphene composite slurry;Low-temperature bonding;Sintering;Surfaces;Plasma treatment
摘要：Recently, silicon carbide (SiC) has replaced silicon (Si) as a potential material for next-generation power devices. In this study, a Si-SiC low-temperature bonding method based on graphene composite slurry as an interlayer was developed. Ar plasma was used to treat the surfaces of Si and SiC to improve surface hydrophilicity for higher strength bonding. With the increase of discharge power, the root-mean -square (RMS) surface roughness of Si and SiC has obviously increased and the bonding quality was also greatly improved. For 70 W discharge power, the RMS surface roughness values of Si and SiC were 3.22 nm and 1.67 nm respectively, and the bonding strength reached approximately 10 MPa. Through SEM interface analysis, it can be found that a seamless bonding interface was obtained using this bonding process. (c) 2021 Elsevier B.V. All rights reserved.
合写作者：Jian-Kun Wan, Xiang Yin, Wen-Hua Yang, Chao Xie, Chun-Yan Wu, Li Wang, Lin-Bao Luo
第一作者：Xi-Ming Ye
通讯作者：Wen-Hua Yang, Lin-Bao Luo
文献类型：Article
卷号：293
ISSN号：0167-577X
是否译文：否
发表时间：2021-06-15