Gallium Doped n-type ZnxCd1-xS Nanoribbons: Synthesis and Photoconductivity Properties
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影响因子：3.2
DOI码：10.1063/1.4865740
发表刊物：Journal of Applied Physics
摘要：Gallium doped ZnxCd1-xS nanoribbons (NRs) with controlled composition were synthesized on Au-coated Si (100) substrates by a simple thermal co-evaporation method. The composition of ZnxCd1-xS:Ga NRs can be simply controlled by the distance of the substrates from the source powder. The grown NRs exhibit excellent crystallinity, with growth direction along [0002]. It is found that the gallium doping can remarkably enhance the conductivity of ZnxCd1-xS:Ga NRs, leading to obvious n-type conduction behavior. It is also observed that the ZnxCd1-xS:Ga NRs show sensitive photoresponse to visible light illumination with excellent stability and reproducibility. The generality of this study suggests the great potential of the ZnxCd1-xS:Ga NRs for future optoelectronics application. (C) 2014 AIP Publishing LLC.
合写作者：Xiang-An Wang, Ran Chen, Chun-Yan Wu, Yong-Qiang Yu, Jun Xu, Ji-Gang Hu, Lin-Bao Luo
第一作者：Li Wang
通讯作者：Li Wang
文献类型：Article
卷号：115
期号：6
ISSN号：0021-8979
是否译文：否
发表时间：2014-02-14