Fabrication of p-type ZnSe:Sb Nanowires for High-Performance Ultraviolet Light Photodetector Application
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影响因子：3.5
DOI码：10.1088/0957-4484/24/9/095603
发表刊物：Nanotechnology
摘要：p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe: Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 x 10(-7) S cm(-1) for the undoped sample to similar to 37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at +/-5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.
合写作者：Lin-Bao Luo, Jing-Jing Chen, Ji-Gang Hu, Chun-Yan Wu, Li Wang, Yong-Qiang Yu, Zhi-Feng Zhu, Jian-Sheng Jie
第一作者：Biao Nie
通讯作者：Biao Nie
文献类型：Article
卷号：24
期号：9
ISSN号：0957-4484
是否译文：否
发表时间：2013-03-08