Qinghe Wang, Associate Professor and Master's Supervisor. He obtained his Ph.D. degree from the Department of Electrical and Electronic Engineering at The University of Hong Kong, and subsequently conducted postdoctoral research in the Department of Physics at The University of Hong Kong. He is currently a Huangshan Scholar Academic Backbone at the School of Integrated Circuit Science and Engineering, Hefei University of Technology. Prior to pursuing his doctoral studies, he worked at BOE Technology Group as a Senior Researcher in the Large-size OLED Backplane Development Department. 

He has served as the principal investigator / key participant in multiple research projects funded by BOE Technology Group, the National Natural Science Foundation of China (NSFC), the Research Grants Council (RGC) of Hong Kong, and the Innovation and Technology Fund (ITF) of Hong Kong. To date, he has published more than 20 academic papers in leading journals and conferences in the field of semiconductor devices, including IEEE Electron Device Letters, IEEE Transactions on Electron Devices, and Applied Physics Letters. He has also been granted more than 160 invention patents worldwide, including over 40 U.S. patents and more than 120 Chinese patents.

His current research interests include:

1. High-k gate-controlled MOSFET devices and device physics;

2. Ultra-wide-bandgap Ga₂O₃ devices and applications;

3. Novel amorphous oxide semiconductor devices and integration.

Selected Publications (Past Five Years)

1. Q. H. Wang, H. Su, and P. T. Lai, "A Channel-Carrier Mobility Model with Gate Screening Effect for Thin-Film Transistor with High-k Gate Dielectric," IEEE Electron Device Letters, vol. 47, no. 1, pp. 92-95, 2026.

2. Q. H. Wang, Y. H. Deng, L. Liu, J. P. Xu, and P. T. Lai, "Effects of Gate-Electrode Plasmons on Remote Phonon Scattering in Thin-Film Transistor with Perovskite Barium Titanate as High-k Gate Dielectric," Applied Physics Letters, vol. 128, no. 16, 2026.

3. Q. H. Wang, H. Sun, and P. T. Lai, "Strength of Remote Phonon Scattering in Metal-Gate Thin-Film Transistors with High-k Gate Dielectric," IEEE EDSSC, 2026.

4. Q. H. Wang, Y. H. Deng, Y. X. Ma, L. Liu, J. P. Xu, and P. T. Lai, "Effects of Temperature on Surface Plasmon Resonance in Organic Thin-Film Transistor," Applied Physics Letters, vol. 126, no. 1, Article 011602, 2025.

5. Q. H. Wang, Y. H. Deng, H. Sun, J. P. Xu, and P. T. Lai, "Hysteresis-Free High-Performance Pentacene Organic Thin-Film Transistor by Sputtering Amorphous Barium Titanate as Ultrathin High-k Gate Dielectric," IEEE Transactions on Electron Devices, vol. 71, no. 10, 2024.

6. Q. H. Wang, H. Sun, Y. X. Ma, H. Su, and P. T. Lai, "Impact of Low-Frequency Phonons in High-k Gate Dielectric on Channel Carrier Mobility of InGaZnO Thin-Film Transistor," IEEE SISC, 2024.

7. H. Sun, Y. H. Deng, Q. H. Wang, and P. T. Lai, "Choice of Metal as Gate Electrode of Thin-Film Transistor with High-k Gate Dielectric," IEEE Electron Device Letters, vol. 46, no. 2, pp. 286-289, 2025.

8. H. Sun, Y. H. Deng, Q. H. Wang, W. M. Tang, and P. T. Lai, "Impact of Gate-Electrode Material on Channel-Carrier Mobility of Thin-Film Transistor with High-k Gate Dielectric," IEEE Electron Device Letters, vol. 45, no. 7, pp. 1197-1200, 2024.

9. Y. H. Deng, R. Su, W. Jiang, H. Sun, Q. H. Wang, L. Liu, J. Xu, and P. T. Lai, "Improved Electrical Uniformity and Performance via Low-Cost Hybrid Wet Transfer Method for Van der Waals Source/Drain Contact Formation in MoS₂ Field-Effect Transistors," IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7943-7947, 2024.

10. Y. X. Ma, Q. H. Wang, H. Chen, P. T. Lai, and W. M. Tang, "NdxHf(1−x)ON as Gate Dielectric for High-Performance Pentacene Organic Thin-Film Transistors," Physica Status Solidi (RRL) – Rapid Research Letters, vol. 17, no. 9, Article 2300049, 2023.

Representative Patents (Past Five Years)

1. Wang Qinghe, et al., Display substrate, preparation method thereof, and display device, US12568746B2, 2026 (Granted U.S. Invention Patent).

2. Wang Qinghe, et al., Thin film transistor, method for manufacturing the same, shift register and gate driving circuit, US12237422B2, 2025 (Granted U.S. Invention Patent).

3. Wang Qinghe, et al., Display substrate including an auxiliary cathode structure and display apparatus having the same, US11910636B2, 2024 (Granted U.S. Invention Patent).

4. Wang Qinghe, et al., Thin film transistor, array substrate, and method for fabricating the same, US11257955B2, 2022 (Granted U.S. Invention Patent).

5. Wang Qinghe, et al., Thin Film Transistor, Display Panel and Preparation Method Thereof, and Display Apparatus, US11335710B2, 2022 (Granted U.S. Invention Patent).

6. Wang Qinghe, et al., Pressure sensing unit and pressure sensor, pressure sensing device, US11287333B2, 2022 (Granted U.S. Invention Patent).

7. Wang Qinghe, et al., Display substrate and preparation method thereof, display panel, and display device, US10930726B2, 2021 (Granted U.S. Invention Patent).

8. Wang Qinghe, et al., Light source structure and lighting device, US10928050B2, 2021 (Granted U.S. Invention Patent).

9. Wang Qinghe, et al., Transistor acoustic sensor element and method for manufacturing the same, acoustic sensor and portable device, US11043644B2, 2021 (Granted U.S. Invention Patent).

10. Wang Qinghe, et al., Chemical sensing unit, chemical sensor, and chemical sensing device electrically coupled to light-emitting diode, US10976281B2, 2021 (Granted U.S. Invention Patent).

Student Recruitment

Our research group is continuously recruiting undergraduate students and master's students who are interested in advanced transistor technologies, wide-bandgap semiconductors, and amorphous oxide semiconductor devices. Interested applicants are warmly welcome to send their CVs to: Email: qhwang@hfut.edu.cn