- Modeling, Analysis and Implementation of Junction-to-Case Thermal Resistance Measurement for Press-Pack IGBT Modules:ICEPT 2018
- Technology Advances and Wear-out Evaluation of 3300V/1500A High-Power IGBT Module:PCIM Europe 2019
- Measures to Improve Efficiency, Peak Power Density and Current Density in an Automotive SiC Drive Train Inverter–Sensitivity Analysis of Design Parameters:PCIM Europe 2021
- Modeling and analysis of current transformer for fast switching power module current measurement:ECCE Aisa
- Detail study of SiC MOSFET switching characteristics:PEDG
- Analytical Model of the Parallel-Connected Silicon Carbide MOSFET Turn-ON Switching Behavior Under Asynchronous Gate Signals:ITEC-AP 2022
- Trajectory-Model-Based Switching Waveform Restoration Method for Accurate Dynamic Characterization of SiC Power MOSFET:PEAC 2022
- Reliability considerations of high power IGBT modules under high temperature/humidity/bias (HTHB) condition:PCIM Europe 2019
- SiC MOSFETs based split output half bridge inverter: Current commutation mechanism and efficiency analysis:ECCE 2014
- Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs:EPE 2014